SK Hynix HYMP112U64CP8-S5 1GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15.4

测试中的平均数值
更快的写入速度，GB/s

2,978.2 12.4

测试中的平均数值

Micron Technology 16ATF2G64HZ-3G2J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 66

左右 -94% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 34
读取速度，GB/s

2,929.1 15.4
写入速度，GB/s

2,978.2 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

511 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMN1740HC48D8F667A 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Micron Technology 16ATF2G64HZ-3G2J1 16GB

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Crucial Technology CT102464BF160B.C16 8GB

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Apacer Technology 78.C1GMW.AZC0B 8GB

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9965662-016.A00G 16GB

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Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMU64GX4M4C3000C15 16GB

Corsair CMU64GX4M4C3000C15 16GB