SK Hynix HYMP112U64CP8-S5 1GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 14.8

测试中的平均数值
更快的写入速度，GB/s

2,978.2 11.2

测试中的平均数值

Micron Technology 4ATF51264HZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 66

左右 -89% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 35
读取速度，GB/s

2,929.1 14.8
写入速度，GB/s

2,978.2 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

511 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965589-007.D01G 8GB

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Kingston 9905712-048.A00G 16GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Samsung M391B5673FH0-CH9 2GB

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Crucial Technology CT8G4SFD8213.C16FHP 8GB

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Crucial Technology BLM16G44C19U4BL.M8FB 16GB

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Kingston 9965525-155.A00LF 8GB

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OCMEMORY OCM3200CL16D-16GBN 8GB

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G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F3-1600C9-8GAR 8GB

G Skill Intl F3-1600C9-8GAR 8GB

G Skill Intl F3-1600C9-8GXM 8GB

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Corsair CM2X1024-6400C4 1GB

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Corsair CMW16GX4M2D3600C18 8GB

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