SK Hynix HYMP112U64CP8-S6 1GB vs Corsair CMSX16GX4M2A2666C18 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

2,076.1 11.3

测试中的平均数值

Corsair CMSX16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMSX16GX4M2A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMSX16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,723.5 15.0
写入速度，GB/s

2,076.1 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

741 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Kingston 9905471-002.A00LF 2GB

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Kingston 9905471-006.A00LF 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

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Peak Electronics 256X64M-67E 2GB

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Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB