SK Hynix HYMP112U64CP8-S6 1GB vs Corsair MK16GX44B3000C15 4GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值
更快的写入速度，GB/s

2,076.1 13.5

测试中的平均数值

Corsair MK16GX44B3000C15 4GB

需要考虑的原因
Corsair MK16GX44B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 59

左右 -181% 更低的延时
更高的内存带宽，mbps

16000 6400

左右 2.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Corsair MK16GX44B3000C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 21
读取速度，GB/s

4,723.5 16.1
写入速度，GB/s

2,076.1 13.5
内存带宽，mbps

6400 16000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-16000, 1.2V, TBD1 V, TBD2 V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

741 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF2933C17S4/32G 32GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Samsung M393A2G40DBD-CP1???? 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Corsair CMSX4GX3M1A1600C9 4GB

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Corsair CMK32GX4M4B3466C16 8GB

Corsair CMK32GX4M4B3466C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB