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Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905702-007.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Kingston 9905702-007.A00G 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Kingston 9905702-007.A00G 8GB

Kingston 9905702-007.A00G 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12.8
    测试中的平均数值
Kingston 9905702-007.A00G 8GB 需要考虑的原因
Kingston 9905702-007.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 60
    左右 -50% 更低的延时
  • 更快的写入速度，GB/s
    7.2 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905702-007.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 40
  • 读取速度，GB/s
    4,595.2 left arrow 12.8
  • 写入速度，GB/s
    2,168.2 left arrow 7.2
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1785

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Kingston 9905702-007.A00G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK32GX4M4K4000C19 8GB
Corsair CMK32GX4M4K4000C19 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
AMD R948G3206U2S 8GB
AMD R948G3206U2S 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M2A2666C18 8GB
Corsair CMK16GX4M2A2666C18 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905702-006.A00G 8GB
Kingston 9905702-006.A00G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Transcend Information JM2666HLE-16G 16GB
Transcend Information JM2666HLE-16G 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMK16GX4M2A2400C16 8GB
Corsair CMK16GX4M2A2400C16 8GB
内存RAM