SK Hynix HYMP112U64CP8-S6 1GB vs Crucial Technology CT16G4DFD824A.C16FJ 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值
更快的写入速度，GB/s

2,076.1 11.2

测试中的平均数值

Crucial Technology CT16G4DFD824A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 59

左右 -103% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 29
读取速度，GB/s

4,723.5 15.7
写入速度，GB/s

2,076.1 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Crucial Technology CT8G4DFS824A.M8FR 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-4000C16-8GTZR 8GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB