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Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M393A2K40CB1-CRC 16GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Samsung M393A2K40CB1-CRC 16GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 45
    左右 4% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 6.5
    测试中的平均数值
Samsung M393A2K40CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K40CB1-CRC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    10.7 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M393A2K40CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 45
  • 读取速度，GB/s
    10.6 left arrow 10.7
  • 写入速度，GB/s
    6.9 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 2142

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Samsung M393A2K40CB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Micron Technology 16KTF51264HZ-1G6M1 4GB
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内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
内存RAM
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G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMK32GX4M2D3600C16 16GB
内存RAM
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Corsair CMWX16GC3000C16W4D 16GB
内存RAM
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PNY Electronics 4GBH2X02E99927-16 4GB
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Kingston KTP9W1-MIE 16GB
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