SK Hynix HYMP112U64CP8-S6 1GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 21

测试中的平均数值
更快的写入速度，GB/s

2,076.1 19.4

测试中的平均数值

G Skill Intl F4-4000C17-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 59

左右 -136% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-4000C17-8GTZRB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 25
读取速度，GB/s

4,723.5 21.0
写入速度，GB/s

2,076.1 19.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 4129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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SpecTek Incorporated 16G 2666 CL 19 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology CT16G4DFD8266.M16FH 16GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB