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SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
比较
SK Hynix HYMP112U64CP8-S6 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
总分
SK Hynix HYMP112U64CP8-S6 1GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB
报告一个错误
更快的读取速度,GB/s
4
14.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
59
左右 -136% 更低的延时
更快的写入速度,GB/s
9.9
2,076.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
25
读取速度,GB/s
4,723.5
14.6
写入速度,GB/s
2,076.1
9.9
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
741
2427
SK Hynix HYMP112U64CP8-S6 1GB RAM的比较
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3200C16-8GSXWB 8GB
报告一个错误
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Bug description
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