SK Hynix HYMP112U64CP8-S6 1GB vs Kingston 9905678-173.A00G 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 10.4

测试中的平均数值

Kingston 9905678-173.A00G 8GB

需要考虑的原因
Kingston 9905678-173.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 59

左右 -55% 更低的延时
更快的写入速度，GB/s

4.7 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Kingston 9905678-173.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 38
读取速度，GB/s

4,723.5 10.4
写入速度，GB/s

2,076.1 4.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 1672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMT1970ED48E8F1066 2GB

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G Skill Intl F4-3200C15-8GVK 8GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Transcend Information TS512MLH64V1H 4GB

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SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB