SK Hynix HYMP112U64CP8-S6 1GB vs Kingston 9965669-018.A00G 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 12.1

测试中的平均数值

Kingston 9965669-018.A00G 16GB

需要考虑的原因
Kingston 9965669-018.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时
更快的写入速度，GB/s

8.3 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Kingston 9965669-018.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,723.5 12.1
写入速度，GB/s

2,076.1 8.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 2460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

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G Skill Intl F4-4200C19-4GTZ 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Kingston 9905734-003.A00G 32GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3000C14-8GTZR 8GB