SK Hynix HYMP112U64CP8-S6 1GB vs Panram International Corporation W4U2666P-8G 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值
更快的写入速度，GB/s

2,076.1 14.2

测试中的平均数值

Panram International Corporation W4U2666P-8G 8GB

需要考虑的原因
Panram International Corporation W4U2666P-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Panram International Corporation W4U2666P-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,723.5 17.3
写入速度，GB/s

2,076.1 14.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

741 3366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Essencore Limited KD48GU880-34A170X 8GB

Essencore Limited KD48GU880-34A170X 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905598-006.A00G 8GB

Kingston 9905598-006.A00G 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

V-Color Technology Inc. TA48G30S815GK 8GB

V-Color Technology Inc. TA48G30S815GK 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB