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Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Samsung M391B5673EH1-CH9 2GB vs Patriot Memory (PDP Systems) 3733 C17 Series 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
Patriot Memory (PDP Systems) 3733 C17 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    12.8 left arrow 19.8
  • 写入速度，GB/s
    9.0 left arrow 16.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3684

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
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Crucial Technology CT51264AC800.C16FC 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
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Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
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Crucial Technology CT102464BF160B.C16 8GB
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Samsung M378A5244CB0-CTD 4GB
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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
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Kingston 99U5474-028.A00LF 4GB
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Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
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AMD AE34G2139U2 4GB
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内存RAM
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内存RAM
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Corsair CMD32GX4M4C3200C14T 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Kingston HP26D4U9S8ME-8X 8GB
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A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM