SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M391A1G43EB1-CRC 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

低于PassMark测试中的延时，ns

59 77

左右 23% 更低的延时
更快的读取速度，GB/s

4 13.6

测试中的平均数值

Samsung M391A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M391A1G43EB1-CRC 8GB

报告一个错误

更快的写入速度，GB/s

6.9 2,076.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M391A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 77
读取速度，GB/s

4,723.5 13.6
写入速度，GB/s

2,076.1 6.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

741 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905630-030.A00G 16GB

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Avant Technology F6451U64F9333G 4GB

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Crucial Technology CT8G4DFS6266.M4FB 8GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

Samsung M378B5273CH0-CH9 4GB

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Corsair CMT32GX4M4C3200C16 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB