SK Hynix HYMP112U64CP8-S6 1GB vs Smart Modular SMS4WEC3C0K0446SCG 4GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值
更快的写入速度，GB/s

2,076.1 12.7

测试中的平均数值

Smart Modular SMS4WEC3C0K0446SCG 4GB

需要考虑的原因
Smart Modular SMS4WEC3C0K0446SCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,723.5 16.0
写入速度，GB/s

2,076.1 12.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

741 2353

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT425S6CFR6A-PB 2GB

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Samsung M47472K43DB1-CTD 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Micron Technology 36ASF4G72PZ-2G3D1 32GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMU32GX4M4C3466C16 8GB

Corsair CMU32GX4M4C3466C16 8GB