Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

更快的读取速度，GB/s

14.2 11.9

测试中的平均数值
更快的写入速度，GB/s

10.3 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

11.9 14.2
写入速度，GB/s

7.6 10.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1610 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

Nanya Technology M2Y2G64CB8HC5N-CG 2GB

Nanya Technology M2Y2G64CB8HC5N-CG 2GB

Nanya Technology M2Y2G64CB8HC5N-CG 2GB

Nanya Technology M2Y2G64CB8HC5N-CG 2GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB