SK Hynix HYMP112U64CP8-Y5 1GB vs Micron Technology 18ADF2G72AZ-2G3B1 16GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Micron Technology 18ADF2G72AZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 62

左右 -130% 更低的延时
更快的写入速度，GB/s

9.9 1,658.4

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 27
读取速度，GB/s

4,216.7 13.7
写入速度，GB/s

1,658.4 9.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

688 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Crucial Technology CT16G4SFRA266.M8FB 16GB

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Crucial Technology CT8G4SFRA266.M8FRS 8GB

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Kingston 9905701-141.A00G 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

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Kingston 99U5429-007.A00LF 2GB

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G Skill Intl F4-4000C18-16GTZR 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

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Smart Modular SH564128FH8NZQNSCG 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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V-Color Technology Inc. TN48G26S819-SB 8GB