Smart Modular SH564128FH8NZQNSCG 4GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 50

左右 44% 更低的延时

Micron Technology 18ASF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PZ-2G3B1 16GB

报告一个错误

更快的读取速度，GB/s

10.2 9.4

测试中的平均数值
更快的写入速度，GB/s

7.3 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 50
读取速度，GB/s

9.4 10.2
写入速度，GB/s

5.5 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1453 2248

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

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Samsung M378B1G73EB0-CK0 8GB

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Strontium SRT8G86U1-P9H 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB