SK Hynix HYMP112U64CP8-Y5 1GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 10.9

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

51 62

左右 -22% 更低的延时
更快的写入速度，GB/s

8.3 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 51
读取速度，GB/s

4,216.7 10.9
写入速度，GB/s

1,658.4 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905700-012.A00G 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F4-3333C16-8GTZKW 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB