SK Hynix HYMP112U64CP8-Y5 1GB vs Micron Technology 18ASF2G72PDZ-2G6D1 16GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 10.5

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 62

左右 -94% 更低的延时
更快的写入速度，GB/s

8.9 1,658.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 32
读取速度，GB/s

4,216.7 10.5
写入速度，GB/s

1,658.4 8.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

688 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A2K43EB1-CWE 16GB

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Samsung M471A2K43CB1-CRC 16GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-4400C19-16GTZR 16GB

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Kingston 9905403-156.A00LF 2GB

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 9965640-013.A01G 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M8B3200C16 8GB

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Kingston 99U5471-012.A00LF 4GB

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G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

Kingston 9905403-437.A01LF 4GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB