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SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

SK Hynix HYMP112U64CP8-Y5 1GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB

总分
star star star star star
SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
Patriot Memory (PDP Systems) 3600 C14 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 62
    左右 -226% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,658.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 19
  • 读取速度，GB/s
    4,216.7 left arrow 16.6
  • 写入速度，GB/s
    1,658.4 left arrow 14.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    688 left arrow 3626

SK Hynix HYMP112U64CP8-Y5 1GB RAM的比较

SK Hynix HYMP112U64CP8-S6 1GB
AMD R748G2606U2S 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB RAM的比较

Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M471B5273CH0-CK0 4GB
Samsung M471B5273CH0-CK0 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Corsair CMK64GX4M8X4133C19 8GB
Corsair CMK64GX4M8X4133C19 8GB
内存RAM