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SK Hynix HYMP125S64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

SK Hynix HYMP125S64CP8-S6 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

总分
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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

差异 规格 评论

差异

SK Hynix HYMP125S64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,013.5 left arrow 11.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 68
    左右 -143% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125S64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 28
  • 读取速度，GB/s
    4,402.8 left arrow 14.3
  • 写入速度，GB/s
    2,013.5 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    701 left arrow 2481

SK Hynix HYMP125S64CP8-S6 2GB RAM的比较

Kingston DDR2 PC800MHz 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Kingston 99U5458-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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Samsung M471A2K43DB1-CWE 16GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM