SK Hynix HYMP125S64CP8-S6 2GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 68

左右 -66% 更低的延时
更快的读取速度，GB/s

7.7 4

测试中的平均数值
更快的写入速度，GB/s

7.6 2,013.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 41
读取速度，GB/s

4,402.8 7.7
写入速度，GB/s

2,013.5 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

701 1855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378T5663QZ3-CF7 2GB

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G Skill Intl F4-3200C14-32GTRG 32GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Corsair CMK64GX4M8Z2933C16 8GB

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A-DATA Technology DDR2 800G 2GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB