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SK Hynix HYMP125U64CP8-S6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

SK Hynix HYMP125U64CP8-S6 2GB vs Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 13.4
    测试中的平均数值
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 60
    左右 -161% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 23
  • 读取速度，GB/s
    5,082.2 left arrow 17.6
  • 写入速度，GB/s
    2,381.6 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    925 left arrow 3038

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5273CH0-CH9 4GB
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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内存RAM
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内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
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