SK Hynix HYMP125U64CP8-S6 2GB vs Corsair CMW64GX4M4D3600C18 16GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 17.6

测试中的平均数值
更快的写入速度，GB/s

2,381.6 15.4

测试中的平均数值

Corsair CMW64GX4M4D3600C18 16GB

需要考虑的原因
Corsair CMW64GX4M4D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 -100% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMW64GX4M4D3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 30
读取速度，GB/s

5,082.2 17.6
写入速度，GB/s

2,381.6 15.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSEK.8FD 8GB

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Samsung 1600 CL10 Series 8GB

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Patriot Memory (PDP Systems) 2133 C14 Series 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Kingston KVR800D2N6/2G 2GB

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Corsair CMSX64GX4M4A2666C18 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Transcend Information JM2400HLB-8G 8GB

Transcend Information JM2400HLB-8G 8GB

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Kingston 9905403-061.A00LF 2GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB