SK Hynix HYMP125U64CP8-S6 2GB vs G Skill Intl F4-3200C16-8GVR 8GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

G Skill Intl F4-3200C16-8GVR 8GB

G Skill Intl F4-3200C16-8GVR 8GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 17.5

测试中的平均数值
更快的写入速度，GB/s

2,381.6 13.2

测试中的平均数值

G Skill Intl F4-3200C16-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 60

左右 -173% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

G Skill Intl F4-3200C16-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 22
读取速度，GB/s

5,082.2 17.5
写入速度，GB/s

2,381.6 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. DDR4 2800 8GB

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Mushkin MRA4S300GJJM16G 16GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3000C15-4GVSB 4GB

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Kingston KHX1866C10D3/8GX 8GB

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Corsair CMT32GX4M4K4000C19 8GB

Corsair CMT32GX4M4K4000C19 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KHX3000C16D4/32GX 32GB

Kingston KHX3000C16D4/32GX 32GB

Crucial Technology CT8G48C40U5.M4A1 8GB

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Samsung M378A1G43EB1-CPB 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB