SK Hynix HYMP125U64CP8-S6 2GB vs G Skill Intl F4-3600C17-8GTZ 8GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 18

测试中的平均数值
更快的写入速度，GB/s

2,381.6 13.9

测试中的平均数值

G Skill Intl F4-3600C17-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 -122% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

G Skill Intl F4-3600C17-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 27
读取速度，GB/s

5,082.2 18.0
写入速度，GB/s

2,381.6 13.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Corsair CMK64GX5M2B5200C40 32GB

Corsair CMK64GX5M2B5200C40 32GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Transcend Information JM2666HSE-16G 16GB

Transcend Information JM2666HSE-16G 16GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB