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SK Hynix HYMP125U64CP8-S6 2GB
Golden Empire CL16-16-16 D4-3200 4GB

SK Hynix HYMP125U64CP8-S6 2GB vs Golden Empire CL16-16-16 D4-3200 4GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 14.3
    测试中的平均数值
Golden Empire CL16-16-16 D4-3200 4GB 需要考虑的原因
Golden Empire CL16-16-16 D4-3200 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 60
    左右 -140% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Golden Empire CL16-16-16 D4-3200 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 25
  • 读取速度，GB/s
    5,082.2 left arrow 18.6
  • 写入速度，GB/s
    2,381.6 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    925 left arrow 3413

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Golden Empire CL16-16-16 D4-3200 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Corsair CMZ32GX3M4A1866C9 8GB
Corsair CMZ32GX3M4A1866C9 8GB
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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KF3733C19D4/16GX 16GB
Kingston KF3733C19D4/16GX 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology 11137401 8GB
A-DATA Technology 11137401 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM