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SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
比较
SK Hynix HYMP125U64CP8-S6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
总分
SK Hynix HYMP125U64CP8-S6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
更快的读取速度,GB/s
5
15.2
测试中的平均数值
更快的写入速度,GB/s
2,381.6
10.2
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
60
左右 -122% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
27
读取速度,GB/s
5,082.2
15.2
写入速度,GB/s
2,381.6
10.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
925
2764
SK Hynix HYMP125U64CP8-S6 2GB RAM的比较
A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB RAM的比较
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KF560C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT8G4DFRA266.C8FP 8GB
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Corsair MK16GX44A2666C16 4GB
Kingston 99U5474-023.A00LF 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology DDR4 3333 2OZ 4GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C14-8GVK 8GB
Kingston 99U5471-030.A00LF 8GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M1D3000C16 16GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CM4X8GC3000C15K4 8GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
报告一个错误
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Bug description
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