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SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB

SK Hynix HYMP125U64CP8-S6 2GB vs Micron Technology 16ATF2G64HZ-2G6E1 16GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 11.2
    测试中的平均数值
Micron Technology 16ATF2G64HZ-2G6E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 60
    左右 -62% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 37
  • 读取速度，GB/s
    5,082.2 left arrow 14.7
  • 写入速度，GB/s
    2,381.6 left arrow 11.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    925 left arrow 2698

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
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Kingston 9905469-124.A00LF 4GB
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Patriot Memory (PDP Systems) PSD416G21332 16GB
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SK Hynix HMT425S6CFR6A-PB 2GB
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G Skill Intl F4-3000C16-8GRS 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
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G Skill Intl F4-3000C15-8GTZB 8GB
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Kingston 9965516-430.A00G 16GB
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Kingston KMKYF9-MIH 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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内存RAM
Kingston 99U5584-017.A00LF 4GB
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Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Kingston KHX3200C18D4/4G 4GB
内存RAM