SK Hynix HYMP125U64CP8-S6 2GB vs Samsung M393A5143DB0-CRC 4GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 10

测试中的平均数值

Samsung M393A5143DB0-CRC 4GB

需要考虑的原因
Samsung M393A5143DB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 60

左右 -28% 更低的延时
更快的写入速度，GB/s

7.5 2,381.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Samsung M393A5143DB0-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 47
读取速度，GB/s

5,082.2 10.0
写入速度，GB/s

2,381.6 7.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

925 2308

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M393A1K43BB1-CTD 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 9905469-124.A00LF 4GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMW16GX4M2C3000C15 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB