SK Hynix HYMP164U64CP6-Y5 512MB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 14.3

测试中的平均数值

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 44

左右 -19% 更低的延时
更快的读取速度，GB/s

21.4 14

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 37
读取速度，GB/s

14,740.4 21.4
写入速度，GB/s

8,883.4 14.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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