SK Hynix HYMP164U64CP6-Y5 512MB vs G Skill Intl F4-3000C14-8GVR 8GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 14.0

测试中的平均数值

G Skill Intl F4-3000C14-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 44

左右 -120% 更低的延时
更快的读取速度，GB/s

18.2 14

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-3000C14-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 20
读取速度，GB/s

14,740.4 18.2
写入速度，GB/s

8,883.4 14.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2811 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N