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SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 8ATF51264AZ-2G1A2 4GB

SK Hynix HYMP164U64CP6-Y5 512MB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分
star star star star star
SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异 规格 评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB 需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB
报告一个错误
  • 更快的写入速度，GB/s
    8,883.4 left arrow 11.0
    测试中的平均数值
Micron Technology 8ATF51264AZ-2G1A2 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 44
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 14
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 8ATF51264AZ-2G1A2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 36
  • 读取速度，GB/s
    14,740.4 left arrow 15.8
  • 写入速度，GB/s
    8,883.4 left arrow 11.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2811 left arrow 2417

SK Hynix HYMP164U64CP6-Y5 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP112U72CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 8ATF51264AZ-2G1A2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Heoriady HX2666CX15D4/4G 4GB
Heoriady HX2666CX15D4/4G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CMK16GX4M2K4500C19 8GB
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AMD AE34G1601U1 4GB
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Kingston 9905598-019.A00G 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung M474A2K43BB1-CPB 16GB
Samsung M474A2K43BB1-CPB 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
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