SK Hynix HYMP164U64CP6-Y5 512MB vs Smart Modular SMS4WEC8C2K0446FCG 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

Smart Modular SMS4WEC8C2K0446FCG 16GB

需要考虑的原因
Smart Modular SMS4WEC8C2K0446FCG 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

14.1 14

测试中的平均数值
更快的写入速度，GB/s

9.0 8,883.4

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Smart Modular SMS4WEC8C2K0446FCG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

14,740.4 14.1
写入速度，GB/s

8,883.4 9.0
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2811 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMK32GX4M4B4000C19 8GB

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Crucial Technology CT8G4SFS832A.M8FRS 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

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Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB