SK Hynix HYMP31GF72CMP4D5Y5 8GB vs G Skill Intl F4-3200C16-16GTZRX 16GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

2,303.7 15.1

测试中的平均数值

G Skill Intl F4-3200C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 117

左右 -333% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3200C16-16GTZRX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 27
读取速度，GB/s

3,094.8 18.4
写入速度，GB/s

2,303.7 15.1
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 99[2/7/4]209F 8GB

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Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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G Skill Intl F4-3000C15-4GVRB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB