SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Panram International Corporation PUD42400C168GVS 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值
更快的写入速度，GB/s

2,303.7 13.4

测试中的平均数值

Panram International Corporation PUD42400C168GVS 8GB

需要考虑的原因
Panram International Corporation PUD42400C168GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 117

左右 -409% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Panram International Corporation PUD42400C168GVS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 23
读取速度，GB/s

3,094.8 17.4
写入速度，GB/s

2,303.7 13.4
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 3063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Samsung M393B1K70CH0-CH9 8GB

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Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB