SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Samsung M471A2K43CB1-CTD 16GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

2,303.7 11.3

测试中的平均数值

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 117

左右 -234% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Samsung M471A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 35
读取速度，GB/s

3,094.8 15.5
写入速度，GB/s

2,303.7 11.3
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Kingston 99U5584-001.A00LF 4GB

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Kingston XVTW4H-MIE 32GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

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Kingston 9965525-140.A00LF 8GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB