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SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4SFS6266.M4FB 8GB

SK Hynix HYMP512S64CP8-Y5 1GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分
star star star star star
SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分
star star star star star
Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异 规格 评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.1
    测试中的平均数值
Crucial Technology CT8G4SFS6266.M4FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 68
    左右 -89% 更低的延时
  • 更快的写入速度，GB/s
    12.6 left arrow 1,670.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 36
  • 读取速度，GB/s
    3,554.9 left arrow 17.1
  • 写入速度，GB/s
    1,670.7 left arrow 12.6
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    513 left arrow 2920

SK Hynix HYMP512S64CP8-Y5 1GB RAM的比较

Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-4000C18-8GTZR 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMT64GX4M4C3000C15 16GB
Corsair CMT64GX4M4C3000C15 16GB
内存RAM
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM