SK Hynix HYMP512S64CP8-Y5 1GB vs G Skill Intl F4-3400C16-16GVK 16GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值

G Skill Intl F4-3400C16-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3400C16-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 68

左右 -162% 更低的延时
更快的写入速度，GB/s

15.0 1,670.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

G Skill Intl F4-3400C16-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 26
读取速度，GB/s

3,554.9 18.7
写入速度，GB/s

1,670.7 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

513 3834

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M2D3600C18 32GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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G Skill Intl F4-3400C16-16GVK 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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INTENSO 5641162 8GB

INTENSO 5641162 8GB

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Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BLS4G4D240FSE.8FE 4GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB