SK Hynix HYMP512U64CP8-Y5 1GB vs Crucial Technology BLS8G4D240FSE.16FBR2 8GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSE.16FBR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的写入速度，GB/s

11.0 1,583.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

3,895.6 15.0
写入速度，GB/s

1,583.7 11.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

639 2637

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB