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SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M393A2K40BB1-CRC 16GB

SK Hynix HYMP512U64CP8-Y5 1GB vs Samsung M393A2K40BB1-CRC 16GB

总分
star star star star star
SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分
star star star star star
Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

差异 规格 评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB
报告一个错误
Samsung M393A2K40BB1-CRC 16GB 需要考虑的原因
Samsung M393A2K40BB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    55 left arrow 63
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    9.4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 1,583.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512U64CP8-Y5 1GB
Samsung M393A2K40BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 55
  • 读取速度，GB/s
    3,895.6 left arrow 9.4
  • 写入速度，GB/s
    1,583.7 left arrow 7.3
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    639 left arrow 2185

SK Hynix HYMP512U64CP8-Y5 1GB RAM的比较

Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB

Samsung M393A2K40BB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2666C15-16GVK 16GB
G Skill Intl F4-2666C15-16GVK 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
内存RAM