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Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905625-142.A00G 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB vs Kingston 9905625-142.A00G 16GB

总分
star star star star star
Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分
star star star star star
Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

差异 规格 评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB 需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB
报告一个错误
Kingston 9905625-142.A00G 16GB 需要考虑的原因
Kingston 9905625-142.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905625-142.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 13.8
  • 写入速度，GB/s
    7.3 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1570 left arrow 2737

Smart Modular SF564128CJ8N6NNSEG 4GB RAM的比较

Smart Modular SH564128FH8N6TNSQG 4GB
Corsair CMK8GX4M1E3200C16 8GB

Kingston 9905625-142.A00G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905625-142.A00G 16GB
Kingston 9905625-142.A00G 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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内存RAM
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Apacer Technology 78.01G86.9H50C 1GB
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内存RAM
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内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
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Corsair MK16GX4M2B3200C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M393A1G40EB1-CPB 8GB
Samsung M393A1G40EB1-CPB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C15-4GVR 4GB
G Skill Intl F4-2666C15-4GVR 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMK64GX4M8A2400C14 8GB
Corsair CMK64GX4M8A2400C14 8GB
内存RAM
A-DATA Technology AM1L16BC2P1-B1FS 2GB
A-DATA Technology AM1L16BC2P1-B1FS 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
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Kingston 9905403-038.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM