Smart Modular SF564128CJ8N6NNSEG 4GB vs Samsung M471A1K43CB1-CRC 8GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 5% 更低的延时

Samsung M471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB

报告一个错误

更快的读取速度，GB/s

13.9 12.3

测试中的平均数值
更快的写入速度，GB/s

9.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

Samsung M471A1K43CB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 37
读取速度，GB/s

12.3 13.9
写入速度，GB/s

7.3 9.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1570 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GC3200C16K4 16GB

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Crucial Technology BLS4G4D26BFSE.8FE 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Golden Empire CL14-16-16 D4-2400 16GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB