Smart Modular SG564568FG8N6KF-Z2 2GB vs Corsair CMD16GX4M2B3600C18 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 20.9

测试中的平均数值
更快的写入速度，GB/s

3,071.4 16.6

测试中的平均数值

Corsair CMD16GX4M2B3600C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 70

左右 -289% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMD16GX4M2B3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 18
读取速度，GB/s

4,372.7 20.9
写入速度，GB/s

3,071.4 16.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMV16GX4M1L2400C16 16GB

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G Skill Intl F4-3200C14-16GTRG 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston KVR26N19D8/16 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMW32GX4M4A2666C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Kingston 9905428-401.A00LF 8GB

Kingston 9905428-401.A00LF 8GB

Corsair CMR32GX4M2F3600C18 16GB

Corsair CMR32GX4M2F3600C18 16GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB