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Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C14-8GVR 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB vs G Skill Intl F4-3000C14-8GVR 8GB

总分
star star star star star
Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分
star star star star star
G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

差异 规格 评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB 需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    3,071.4 left arrow 14.0
    测试中的平均数值
G Skill Intl F4-3000C14-8GVR 8GB 需要考虑的原因
G Skill Intl F4-3000C14-8GVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 70
    左右 -250% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C14-8GVR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    70 left arrow 20
  • 读取速度，GB/s
    4,372.7 left arrow 18.2
  • 写入速度，GB/s
    3,071.4 left arrow 14.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 3359

Smart Modular SG564568FG8N6KF-Z2 2GB RAM的比较

Team Group Inc. Xtreem-Dark-1066C6 2GB
Kingmax Semiconductor KLDE88F-B8KW6 2GB

G Skill Intl F4-3000C14-8GVR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KY7N41-MID 8GB
Kingston KY7N41-MID 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Golden Empire CL15-15-15 D4-2400 4GB
Golden Empire CL15-15-15 D4-2400 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GE2666C16K4 16GB
Corsair CM4X16GE2666C16K4 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Corsair CMR16GX4M2C 8GB
Corsair CMR16GX4M2C 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM