Smart Modular SG564568FG8N6KF-Z2 2GB vs INTENSO GKE800UD102408-2133 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

INTENSO GKE800UD102408-2133 8GB

需要考虑的原因
INTENSO GKE800UD102408-2133 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 70

左右 -133% 更低的延时
更快的写入速度，GB/s

9.7 3,071.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

INTENSO GKE800UD102408-2133 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 30
读取速度，GB/s

4,372.7 15.5
写入速度，GB/s

3,071.4 9.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS824A.C8FBD2 4GB

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SK Hynix HMA851U6AFR6N-UH 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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INTENSO GKE800UD102408-2133 8GB

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Crucial Technology CT102464BD160B.M16 8GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Kingston ACR26D4S9D8ME-16 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

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Kingston 9905471-001.A01LF 2GB

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMW32GX4M4C3200C16 8GB

Corsair CMW32GX4M4C3200C16 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB