Smart Modular SG564568FG8N6KF-Z2 2GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 18.6

测试中的平均数值
更快的写入速度，GB/s

3,071.4 15.3

测试中的平均数值

Micron Technology 16ATF2G64AZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 70

左右 -94% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 36
读取速度，GB/s

4,372.7 18.6
写入速度，GB/s

3,071.4 15.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology BL16G36C16U4B.M8FB1 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

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G Skill Intl F4-3600C16-32GTZN 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB