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Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分
star star star star star
Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分
star star star star star
Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异 规格 评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB 需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12
    测试中的平均数值
Micron Technology CT8G4DFD8213.16FA11 8GB 需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 70
    左右 -150% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 3,071.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    70 left arrow 28
  • 读取速度，GB/s
    4,372.7 left arrow 12.0
  • 写入速度，GB/s
    3,071.4 left arrow 9.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2347

Smart Modular SG564568FG8N6KF-Z2 2GB RAM的比较

Team Group Inc. Xtreem-Dark-1066C6 2GB
Kingmax Semiconductor KLDE88F-B8KW6 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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