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Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

总分
star star star star star
Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

差异 规格 评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB 需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    3,071.4 left arrow 13.4
    测试中的平均数值
Samsung V-GeN D4S16GL26A8TL6 16GB 需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 70
    左右 -119% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    70 left arrow 32
  • 读取速度，GB/s
    4,372.7 left arrow 16.0
  • 写入速度，GB/s
    3,071.4 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    668 left arrow 1897

Smart Modular SG564568FG8N6KF-Z2 2GB RAM的比较

Team Group Inc. Xtreem-Dark-1066C6 2GB
Kingmax Semiconductor KLDE88F-B8KW6 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
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Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
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SK Hynix HMT41GS6AFR8A-PB 8GB
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内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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